Bilayer Graphene Film Si-SIO2 -10mm X 10mm

Our Bilayer Graphene Film Si-SIO2 – 10mm X 10mm is grown on a 50 micron-thick copper foil that is coated with two atomic layer of graphene which is deposited via chemical vapor deposition (CVD). For products on Si-SiO2substrates, it is transferred to the substrate using a wet transfer process. A bilayer Graphene Film-Si-SiO2 – 10mm X 10mm is flexible allowing for its use in flexible electronics, a growing field. Our Bilayer graphene films 4 pack has the right mix of small size and cost effectiveness to kick start your R&D projects.

Graphene Film

Transparency: > 97%

Coverage: > 95%

Thickness (theoretical): 0.345 nm

FET Electron Mobility on Al2O3: 2000 cm2/Vs

FET Electron Mobility on SiO2/Si: 4000 cm2/Vs

Sheet Resistance: 580±50 Ohms/sq (1cm x 1cm)

Grain size: Up to 10 μm

Substrate SiO2/Si

• Dry Oxide Thickness: 300 nm (+/-5%)
• Type/Dopant: P/Bor
• Orientation: <100>
• Resistivity: <0.005 Ohm·cm
• Thickness: 525 +/- 20 μm
• Front surface: Single Side Polished
• Back Surface: Etched
• Particles: <10@0.3 μm